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DTD123YCHZGT116Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SST3

1:$0.3080

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR292-DTD123-74871
ManufacturerRohm Semiconductor
MPN #.DTD123YCHZGT116
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetDTD123YCHZGT116 (PDF)
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In Stock: 3248
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.3080
Ext. Price$0.3080
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3080$0.3080
10$0.2100$2.1040
100$0.1020$10.2000
500$0.0850$42.5000
1000$0.0600$59.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberDTD123
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 50mA, 5V
Frequency - Transition200 MHz
GradeAutomotive
Mounting StyleSurface Mount
Power - Max200 mW
QualificationAEC-Q101
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
Package Type (Mfr.)SST3
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
DTD123YCHZGT116
Other Related Documents
Anti-Whisker Info for TransistorsPart No. Explanation, Transistors
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The DTD123YCHZGT116 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Rohm Semiconductor. It is designed for surface mount applications, featuring a maximum collector-emitter voltage of 50 V and a collector current of up to 500 mA. The transistor operates at a frequency of 200 MHz and can dissipate up to 200 mW of power. It includes a built-in biasing resistor network, which consists of a 2.2 kOhms base resistor and a 10 kOhms pull-down resistor, offering a current gain of 56 at a collector current of 50 mA and a voltage of 5V. These characteristics make it suitable for compact, high-frequency switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.