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DTC043XUBTLPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount UMT3F
1:$0.1970
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ABRmicro #.ABR292-DTC043-80313
ManufacturerRohm Semiconductor
MPN #.DTC043XUBTL
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDTC043XUBTL (PDF)
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In Stock: 26
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.1970
Ext. Price$0.1970
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.1970$0.1970
10$0.1330$1.3280
100$0.0640$6.3750
500$0.0540$27.0940
1000$0.0370$37.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberDTC043
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Frequency - Transition250 MHz
Mounting StyleSurface Mount
Power - Max200 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms
Package Type (Mfr.)UMT3F
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 5mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseSC-85
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3 Additional Details
The DTC043XUBTL is a surface-mount pre-biased NPN bipolar junction transistor (BJT) manufactured by Rohm Semiconductor. It features a maximum voltage rating of 50 V, a current capacity of up to 100 mA, and a transition frequency of 250 MHz. The device is designed to handle a power dissipation of 200 mW and comes in a UMT3F package. It incorporates a built-in resistor network with a base resistor value of 10 kOhms, ensuring a low base current of 500 nA with a typical voltage drop of 150 mV at a base current of 500 µA and collector current of 5 mA. This component offers a compact and efficient solution for general switching applications.
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