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DTB113ECHZGT116Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SST3
1:$0.3410
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ABRmicro #.ABR292-DTB113-96757
ManufacturerRohm Semiconductor
MPN #.DTB113ECHZGT116
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDTB113ECHZGT116 (PDF)
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In Stock: 632
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.3410
Ext. Price$0.3410
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3410$0.3410
10$0.2400$2.4010
100$0.1220$12.2190
500$0.1000$49.9380
1000$0.0730$73.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberDTB113
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 50mA, 5V
Frequency - Transition200 MHz
GradeAutomotive
Mounting StyleSurface Mount
Power - Max200 mW
QualificationAEC-Q101
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
Package Type (Mfr.)SST3
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3 Additional Details
The DTB113ECHZGT116 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Rohm Semiconductor. This transistor is designed for a maximum voltage of 50 V and can handle a current of up to 500 mA, making it suitable for low to moderate power applications. It operates with a frequency of 200 MHz and has a power dissipation capacity of 200 mW, all in a compact surface mount package type SST3. It features an integrated biasing network with a base current capability of 500 nA and resistors of 1 kOhm each, which helps simplify circuit design by reducing the number of external components needed.
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