SUP85N10-10-E3N-Channel 100 V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB
1:$5.1260
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SUP85N-149165
ManufacturerVishay Siliconix
MPN #.SUP85N10-10-E3
Estimated Lead Time11 Weeks
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Datasheet
IRLZ44(PDF)
IRLZ44(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 5.1260
Ext. Price$ 5.1260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.1260$5.1260
50$4.0620$203.1000
100$3.4820$348.2000
500$3.0940$1547.0000
1000$2.6490$2649.0000
2000$2.4950$4990.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
SeriesTrenchFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSUP85
Continuous Drain Current (ID) @ 25°C85A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)160 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6550 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 250W (Tc)
RDS(on) Drain-to-Source On Resistance10.5mOhm @ 30A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)