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SI7390DP-T1-GE3N-Channel 30 V 9A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

1:$0.9870

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-SI7390-2862
ManufacturerVishay Siliconix
MPN #.SI7390DP-T1-GE3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSI7390DP (PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.9870
Ext. Price$0.9870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.9870$2961.1880
6000$0.9500$5699.2500
9000$0.9180$8262.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSI7390
Continuous Drain Current (ID) @ 25°C9A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 15A, 10V
Package Type (Mfr.)PowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CasePowerPAK® SO-8
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SI7390DP
PCN Assembly/Origin
New solder paste 26/May/2023
PCN Design/Specification
Mult Dev 07/Jun/2023
PCN Obsolescence/ EOL
DK OBS NOTICEOBS NOTICE 4/Dec/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The SI7390DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Siliconix, designed for efficient performance in various electronic circuits. It operates at a voltage of 30 V and can handle a current of up to 9A, with a power dissipation of 1.8W, making it suitable for use in compact spaces due to its Surface Mount technology in a PowerPAK® SO-8 package. This MOSFET supports gate-source voltages up to ±20V, with recommended gate-source voltages at 4.5V and 10V for optimal operation.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.