SIHB100N60E-GE3N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
1:$4.1710
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-SIHB10-2425
ManufacturerVishay Siliconix
MPN #.SIHB100N60E-GE3
Estimated Lead Time23 Weeks
SampleGet Free Sample
Datasheet
SIHB100N60E (PDF)
SIHB100N60E (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$4.1710
Ext. Price$4.1710
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.1710$4.1710
50$3.3030$165.1660
100$2.8320$283.1560
500$2.5170$1258.5310
1000$2.1550$2154.7500
2000$2.0290$4058.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesE
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHB100
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1851 pF @ 100 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation208W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 13A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
SI2308DS-T1-E3$0.4530
N-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
SI7922DN-T1-GE3$1.0170
Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
SQ7415AENW-T1_GE3$0.8290
P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8
SQM120N04-1M9_GE3$1.6710
N-Channel 40 V 120A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK) Additional Details
The SIHB100N60E-GE3 is a N-Channel MOSFET manufactured by Vishay Siliconix, designed for high-efficiency power management applications. It operates with a maximum voltage of 600 V and offers a continuous current of up to 30 A when properly mounted on a heat sink, ensuring reliable performance even under significant load conditions. The device is housed in a TO-263 (D2PAK) surface-mount package, which provides efficient thermal management capabilities. It features a low gate charge of 50 nC at 10 V, allowing for fast switching speeds, and it operates within a gate source voltage range of ±30 V. The MOSFET also requires a gate voltage of 5 V for an input current of 250 µA. With a robust power dissipation rating of 208 W, this component is optimized for efficient handling of power in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.