SI2308DS-T1-E3N-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
1:$0.4530
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ABRmicro #.ABR278-SI2308-2587
ManufacturerVishay Siliconix
MPN #.SI2308DS-T1-E3
Estimated Lead Time-
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Datasheet
SI2308DS (PDF)
SI2308DS (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.4530
Ext. Price$0.4530
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Price Gradients
Qty.Unit PriceExt. Price
1$0.4530$0.4530
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSI2308
Continuous Drain Current (ID) @ 25°C2A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)240 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.25W (Ta)
RDS(on) Drain-to-Source On Resistance160mOhm @ 2A, 10V
Package Type (Mfr.)SOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The SI2308DS-T1-E3 is an N-Channel MOSFET produced by Vishay Siliconix, designed for surface mounting in a compact SOT-23-3 package. This device is capable of handling a maximum drain-source voltage (Vds) of 60 volts and a continuous drain current of 2 amperes when housed in ambient conditions with a thermal power dissipation capacity of 1.25 watts. It features a gate-source voltage (Vgs) rating of ±20 volts and a gate charge of 10 nanocoulombs at 10 volts, making it suitable for efficient switching operations. The SI2308DS-T1-E3 is engineered to operate with gate drive voltages of 4.5 to 10 volts, which supports its role in low to medium power applications where size and thermal performance are critical.
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