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SI1965DH-T1-GE3Mosfet Array 12V 1.3A 1.25W Surface Mount SC-70-6
1:$0.3940
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SI1965-2828
ManufacturerVishay Siliconix
MPN #.SI1965DH-T1-GE3
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetSI1965DH(PDF)
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In Stock: 3426
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.3940
Ext. Price$ 0.3940
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3940$0.3940
10$0.3340$3.3400
100$0.2330$23.3000
500$0.1810$90.5000
1000$0.1480$148.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 40 V 120A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK) Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI1965
Configuration2 P-Channel (Dual)
Continuous Drain Current (ID) @ 25°C1.3A
Drain-to-Source Voltage (VDS)12V
FET FeatureLogic Level Gate
Gate Charge Total (Qg)(Max.)4.2nC @ 8V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)120pF @ 6V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max1.25W
RDS(on) Drain-to-Source On Resistance390mOhm @ 1A, 4.5V
Package Type (Mfr.)SC-70-6
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case6-TSSOP, SC-88, SOT-363
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)