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SI7922DN-T1-GE3Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
1:$0.9570
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SI7922-2619
ManufacturerVishay Siliconix
MPN #.SI7922DN-T1-GE3
Estimated Lead Time11 Weeks
SampleGet Free Sample
DatasheetSi7922DN(PDF)
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In Stock: 29424
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.9570
Ext. Price$ 0.9570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9570$0.9570
10$0.7980$7.9800
100$0.6350$63.5000
500$0.5730$286.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8SQM120N04-1M9_GE3$1.5730
N-Channel 40 V 120A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK) Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI7922
Configuration2 N-Channel (Dual)
Continuous Drain Current (ID) @ 25°C1.8A
Drain-to-Source Voltage (VDS)100V
FET FeatureLogic Level Gate
Gate Charge Total (Qg)(Max.)8nC @ 10V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)-
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max1.3W
RDS(on) Drain-to-Source On Resistance195mOhm @ 2.5A, 10V
Package Type (Mfr.)PowerPAK® 1212-8 Dual
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CasePowerPAK® 1212-8 Dual
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)