Image is for reference only, the actual product serves as the standard.
SI7922DN-T1-GE3Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
1:$1.0170
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR289-SI7922-2619
ManufacturerVishay Siliconix
MPN #.SI7922DN-T1-GE3
Estimated Lead Time11 Weeks
SampleGet Free Sample
DatasheetSi7922DN (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 29424
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$1.0170
Ext. Price$1.0170
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0170$1.0170
10$0.8480$8.4790
100$0.6750$67.4690
500$0.6090$304.4060
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI7922
Configuration2 N-Channel (Dual)
Continuous Drain Current (ID) @ 25°C1.8A
Drain-to-Source Voltage (VDS)100V
FET FeatureLogic Level Gate
Gate Charge Total (Qg)(Max.)8nC @ 10V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)-
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max1.3W
RDS(on) Drain-to-Source On Resistance195mOhm @ 2.5A, 10V
Package Type (Mfr.)PowerPAK® 1212-8 Dual
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CasePowerPAK® 1212-8 Dual
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
SI2308DS-T1-E3$0.4530
N-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)SIHB100N60E-GE3$4.1710
N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)SQ7415AENW-T1_GE3$0.8290
P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8SQM120N04-1M9_GE3$1.6710
N-Channel 40 V 120A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK) Additional Details
The SI7922DN-T1-GE3 is a MOSFET array manufactured by Vishay Siliconix, designed for efficient power management in space-constrained environments. This component features dual MOSFETs in a compact PowerPAK® 1212-8 surface-mount package, offering a voltage rating of 100V and a continuous current rating of 1.8A. It provides a power dissipation capability of 1.3W, and includes a logic level gate with a threshold voltage of 3.5V at 250µA and a gate charge of 8nC at 10V, ensuring low on-resistance and efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.