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SIZ710DT-T1-GE3Mosfet Array 20V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™

1:$1.2230

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR289-SIZ710-2820
ManufacturerVishay Siliconix
MPN #.SIZ710DT-T1-GE3
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetSiZ710DT (PDF)
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In Stock: 13539
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$1.2230
Ext. Price$1.2230
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2230$1.2230
10$1.0030$10.0300
100$0.7800$77.9880
500$0.6610$330.4380
1000$0.5390$538.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSIZ710
Configuration2 N-Channel (Half Bridge)
Continuous Drain Current (ID) @ 25°C16A, 35A
Drain-to-Source Voltage (VDS)20V
FET FeatureLogic Level Gate
Gate Charge Total (Qg)(Max.)18nC @ 10V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)820pF @ 10V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max27W, 48W
RDS(on) Drain-to-Source On Resistance6.8mOhm @ 19A, 10V
Package Type (Mfr.)6-PowerPair™
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case6-PowerPair™
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SiZ710DT
PCN Assembly/Origin
Multiple Fabracation Changes09/Jul/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationPending Vendor Confirmation
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The SIZ710DT-T1-GE3 is a high-performance N-channel MOSFET array manufactured by Vishay Siliconix. Designed for surface mount applications, it features a 6-PowerPair™ configuration, providing efficient power management and improved thermal performance. This device operates with a maximum drain-to-source voltage of 20V and can handle continuous drain currents up to 16A, with peak currents reaching 35A. It has a maximum power dissipation of 27W (continuous) and 48W (pulsed), making it suitable for a variety of power-sensitive applications. Its compact form factor and integrated design allow for reduced PCB space and ease of integration in power systems, making it ideal for use in automotive, industrial, and consumer electronics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.