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SQM120N04-1M9_GE3N-Channel 40 V 120A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK)

1:$1.6710

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ABRmicro #.ABR278-SQM120-3027
ManufacturerVishay Siliconix
MPN #.SQM120N04-1M9_GE3
Estimated Lead Time20 Weeks
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DatasheetDatasheetSQM120N04-1M9-G... (PDF)
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In Stock: 142
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.6710
Ext. Price$1.6710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
800$1.6710$1337.0500
1600$1.4310$2289.9000
2400$1.3480$3235.9500
5600$1.2930$7241.1500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberSQM120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)270 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8790 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance1.9mOhm @ 30A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SQM120N04-1M9-GE3
PCN Assembly/Origin
SIL-030-2014-Rev-1 31/Mar/2014
PCN Part Number
New Ordering Code 19/Mar/2015
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The SQM120N04-1M9_GE3 is an N-channel MOSFET manufactured by Vishay Siliconix, designed for surface mount applications in a TO-263 (D2PAK) package. It features a drain-source voltage of 40V and can handle continuous current up to 120A (at the case temperature), with a power dissipation capacity of 300W. This MOSFET exhibits a low on-state resistance of 1.9mOhms at 30A and 10V, contributing to its efficiency in switching operations. It operates with a gate threshold voltage of 3.5V at 250µA and can withstand ±20V of gate-to-source voltage, making it versatile for various high-current applications while maintaining reliable performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.