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SUP65P04-15-E3P-Channel 40 V 65A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-SUP65P-9498
ManufacturerVishay Siliconix
MPN #.SUP65P04-15-E3
Estimated Lead Time-
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DatasheetDatasheetIRLZ44(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Shipping DateNovember 3, 2024
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Technical Specifications
SeriesTrenchFET®
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberSUP65
Continuous Drain Current (ID) @ 25°C65A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5400 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 120W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 30A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRLZ44
PCN Obsolescence/ EOL
SIL-0632014 16/Apr/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)