SUG90090E-GE3N-Channel 200 V 100A (Tc) 395W (Tc) Through Hole TO-247AC
1:$3.4040
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SUG900-96063
ManufacturerVishay Siliconix
MPN #.SUG90090E-GE3
Estimated Lead Time34 Weeks
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Datasheet
SUG90090E(PDF)
SUG90090E(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 3.4040
Ext. Price$ 3.4040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.4040$3.4040
25$2.6950$67.3750
100$2.3100$231.0000
500$2.0540$1027.0000
1000$1.7590$1759.0000
2000$1.6550$3310.0000
5000$1.5880$7940.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
SeriesThunderFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSUG90090
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)129 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5220 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation395W (Tc)
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 20A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)