SQS420EN-T1_GE3N-Channel 20 V 8A (Tc) 18W (Tc) Surface Mount PowerPAK® 1212-8
1:$0.7800
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SQS420-57133
ManufacturerVishay Siliconix
MPN #.SQS420EN-T1_GE3
Estimated Lead Time17 Weeks
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Datasheet
SQS420EN-T1-GE3(PDF)
SQS420EN-T1-GE3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 0.7800
Ext. Price$ 0.7800
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7800$0.7800
10$0.6370$6.3700
100$0.4950$49.5000
500$0.4200$210.0000
1000$0.3420$342.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSQS420
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)490 pF @ 10 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation18W (Tc)
RDS(on) Drain-to-Source On Resistance28mOhm @ 5A, 4.5V
Package Type (Mfr.)PowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / CasePowerPAK® 1212-8
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Datasheets
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PCN Part Number
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)