ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
SQP120N06-3M5L_GE3N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole TO-220AB

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SQP120-75404
ManufacturerVishay Siliconix
MPN #.SQP120N06-3M5L_GE3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSQP120N06-3M5L(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
SI1965DH-T1-GE3$0.3940
Vishay Siliconix
Mosfet Array 12V 1.3A 1.25W Surface Mount SC-70-6
SI2308DS-T1-E3$0.4260
Vishay Siliconix
N-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
SI7390DP-T1-GE3$0.9290
Vishay Siliconix
N-Channel 30 V 9A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
SI7922DN-T1-GE3$0.9570
Vishay Siliconix
Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
SIHB100N60E-GE3$3.9260
Vishay Siliconix
N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
SIZ710DT-T1-GE3$1.1510
Vishay Siliconix
Mosfet Array 20V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
SQ7415AENW-T1_GE3$0.7800
Vishay Siliconix
P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8
Technical Specifications
SeriesTrenchFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSQP120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)330 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14700 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 30A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SQP120N06-3M5L
PCN Obsolescence/ EOL
Mult Dev EOL 12/Nov/2021
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)