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SQM40014EM_GE3N-Channel 40 V 200A (Tc) 375W (Tc) Surface Mount TO-263-7

1:$2.4530

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ABRmicro #.ABR278-SQM400-3625
ManufacturerVishay Siliconix
MPN #.SQM40014EM_GE3
Estimated Lead Time-
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DatasheetDatasheetSQM40014EM (PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$2.4530
Ext. Price$2.4530
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4530$2.4530
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusEnd of Life (EOL)
Base Product NumberSQM40014
Continuous Drain Current (ID) @ 25°C200A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)250 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)15525 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance1mOhm @ 35A, 10V
Package Type (Mfr.)TO-263-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SQM40014EM
PCN Obsolescence/ EOL
DPAK/D2PAK EOL 13/Jun/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The SQM40014EM_GE3 is an N-Channel MOSFET manufactured by Vishay Siliconix. This surface-mount device features a TO-263-7 package and offers a robust performance with a maximum drain-source voltage of 40V and a continuous drain current of 200A at a case temperature of 25°C. The device is highly efficient, characterized by a low on-state resistance of just 1mOhm at 35A and a gate-source voltage of 10V, enabling minimal power loss. With a maximum power dissipation of 375W, the SQM40014EM_GE3 is suitable for high-power applications, offering reliable and efficient performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.