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SQM120N10-09_GE3N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

1:$1.4590

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SQM120-65747
ManufacturerVishay Siliconix
MPN #.SQM120N10-09_GE3
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetSQM120N10-09(PDF)
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In Stock: 138
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.4590
Ext. Price$ 1.4590
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
800$1.4590$1167.2000
1600$1.2490$1998.4000
2400$1.1760$2822.4000
5600$1.1290$6322.4000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberSQM120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)180 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8645 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 30A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SQM120N10-09
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)