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SQJA42EP-T1_GE3N-Channel 40 V 20A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8
1:$1.1260
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SQJA42-98578
ManufacturerVishay Siliconix
MPN #.SQJA42EP-T1_GE3
Estimated Lead Time28 Weeks
SampleGet Free Sample
DatasheetSQJA42EP(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.1260
Ext. Price$ 1.1260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1260$1.1260
10$0.9240$9.2400
100$0.7180$71.8000
500$0.6090$304.5000
1000$0.4960$496.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSQJA42
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation27W (Tc)
RDS(on) Drain-to-Source On Resistance9.4mOhm @ 6A, 10V
Package Type (Mfr.)PowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 250µA
Package / CasePowerPAK® SO-8
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)