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SQD50P03-07_GE3P-Channel 30 V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

1:$2.2650

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-SQD50P-3061
ManufacturerVishay Siliconix
MPN #.SQD50P03-07_GE3
Estimated Lead Time20 Weeks
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DatasheetDatasheetSQD50P03-07 (PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$2.2650
Ext. Price$2.2650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2650$2.2650
10$1.8850$18.8490
100$1.5000$150.0250
500$1.2690$634.3130
1000$1.0760$1076.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSQD50
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)146 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5490 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation136W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 20A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SQD50P03-07
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The SQD50P03-07_GE3 is a P-Channel MOSFET produced by Vishay Siliconix, designed for surface mount applications in the TO-252AA package. It is capable of handling up to 50A of continuous current with a power dissipation of 136W, when properly mounted and heat sunk at the case temperature rating. The device operates efficiently with a gate drive voltage threshold of 2.5V at 250µA and can withstand gate-source voltages of up to ±20V. The part is optimized for low on-resistance to enhance switching performance in power-sensitive designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.