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SQD40061EL_GE3P-Channel 40 V 100A (Tc) 107W (Tc) Surface Mount TO-252AA

1:$1.2710

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SQD400-265607
ManufacturerVishay Siliconix
MPN #.SQD40061EL_GE3
Estimated Lead Time20 Weeks
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In Stock: 3497
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 1.2710
Ext. Price$ 1.2710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2710$1.2710
10$1.0430$10.4300
100$0.8110$81.1000
500$0.6880$344.0000
1000$0.5600$560.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSQD40061
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)280 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14500 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation107W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance5.1mOhm @ 30A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)