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SIS424DN-T1-GE3N-Channel 20 V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

1:$0.3160

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIS424-65368
ManufacturerVishay Siliconix
MPN #.SIS424DN-T1-GE3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSIS424DN(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 0.3160
Ext. Price$ 0.3160
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.3160$948.0000
6000$0.3010$1806.0000
9000$0.2870$2583.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSIS424
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 10 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.7W (Ta), 39W (Tc)
RDS(on) Drain-to-Source On Resistance6.4mOhm @ 19.6A, 10V
Package Type (Mfr.)PowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CasePowerPAK® 1212-8
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SIS424DN
PCN Assembly/Origin
Multiple Fabracation Changes09/Jul/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)