Image is for reference only, the actual product serves as the standard.
SIRA60DP-T1-RE3N-Channel 30 V 100A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8

1:$0.4520

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIRA60-156906
ManufacturerVishay Siliconix
MPN #.SIRA60DP-T1-RE3
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetSIRA60DP(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 91
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 0.4520
Ext. Price$ 0.4520
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
6000$0.4520$2712.0000
9000$0.4310$3879.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Mosfet Array 12V 1.3A 1.25W Surface Mount SC-70-6
N-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 30 V 9A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
Mosfet Array 20V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8
Technical Specifications
SeriesTrenchFET® Gen IV
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberSIRA60
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)125 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7650 pF @ 15 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation57W (Tc)
RDS(on) Drain-to-Source On Resistance0.94mOhm @ 20A, 10V
Package Type (Mfr.)PowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+20V, -16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CasePowerPAK® SO-8
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)