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SIRA52DP-T1-RE3N-Channel 40 V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

1:$0.4230

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIRA52-252418
ManufacturerVishay Siliconix
MPN #.SIRA52DP-T1-RE3
Estimated Lead Time34 Weeks
SampleGet Free Sample
DatasheetDatasheetN-Channel 40 V (D-S) MOSFET(PDF)
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In Stock: 97
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 0.4230
Ext. Price$ 0.4230
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
6000$0.4230$2538.0000
9000$0.4040$3636.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET® Gen IV
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberSIRA52
Continuous Drain Current (ID) @ 25°C60A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7150 pF @ 20 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance1.7mOhm @ 15A, 10V
Package Type (Mfr.)PowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+20V, -16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 250µA
Package / CasePowerPAK® SO-8
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
N-Channel 40 V (D-S) MOSFET
PCN Assembly/Origin
New solder paste 26/May/2023
PCN Design/Specification
Mult Dev 07/Jun/2023
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)