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SIR104DP-T1-RE3N-Channel 100 V 18.3A (Ta), 79A (Tc) 5.4W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

1:$1.9220

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIR104-34825
ManufacturerVishay Siliconix
MPN #.SIR104DP-T1-RE3
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetSIR104DP(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 1.9220
Ext. Price$ 1.9220
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9220$1.9220
10$1.5990$15.9900
100$1.2730$127.3000
500$1.0770$538.5000
1000$0.9130$913.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET® Gen IV
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSIR104
Continuous Drain Current (ID) @ 25°C18.3A (Ta), 79A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4230 pF @ 50 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation5.4W (Ta), 100W (Tc)
RDS(on) Drain-to-Source On Resistance6.4mOhm @ 15A, 10V
Package Type (Mfr.)PowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CasePowerPAK® SO-8
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)