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SIHW61N65EF-GE3N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AD

1:$7.1870

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHW61-10185
ManufacturerVishay Siliconix
MPN #.SIHW61N65EF-GE3
Estimated Lead Time23 Weeks
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DatasheetDatasheetSIHW61N65EF(PDF)
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In Stock: 81
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 7.1870
Ext. Price$ 7.1870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
480$7.1870$3449.7600
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesE
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHW61
Continuous Drain Current (ID) @ 25°C64A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)371 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7407 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation520W (Tc)
RDS(on) Drain-to-Source On Resistance47mOhm @ 30.5A, 10V
Package Type (Mfr.)TO-247AD
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
SIHW61N65EF
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)