SIHS20N50C-E3N-Channel 500 V 20A (Tc) 250mW (Tc) Through Hole SUPER-247™ (TO-274AA)
1:$3.8640
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ABRmicro #.ABR2045-SIHS20-92610
ManufacturerVishay Siliconix
MPN #.SIHS20N50C-E3
Estimated Lead Time14 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 3.8640
Ext. Price$ 3.8640
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
480$3.8640$1854.7200
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHS20
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)76 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2942 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation250mW (Tc)
RDS(on) Drain-to-Source On Resistance270mOhm @ 10A, 10V
Package Type (Mfr.)SUPER-247™ (TO-274AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-274AA
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PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)