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SIHP30N60E-GE3N-Channel 600 V 29A (Tc) 250W (Tc) Through Hole

1:$3.6690

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHP30-566823
ManufacturerVishay Siliconix
MPN #.SIHP30N60E-GE3
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetDatasheetSiHP30N60E(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 3.6690
Ext. Price$ 3.6690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$3.6690$183.4500
100$3.1450$314.5000
250$2.9700$742.5000
500$2.7960$1398.0000
1250$2.3930$2991.2500
2500$2.2540$5635.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesE
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHP30
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2600 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 15A, 10V
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SiHP30N60E
PCN Assembly/Origin
Mult Dev Material Chg 30/Aug/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)