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SIHP12N50E-GE3N-Channel 500 V 10.5A (Tc) 114W (Tc) Through Hole TO-220AB

1:$1.4400

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHP12-10736
ManufacturerVishay Siliconix
MPN #.SIHP12N50E-GE3
Estimated Lead Time15 Weeks
SampleGet Free Sample
DatasheetDatasheetSIHP12N50E(PDF)
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In Stock: 700
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 1.4400
Ext. Price$ 1.4400
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4400$1.4400
50$1.1560$57.8000
100$0.9510$95.1000
500$0.8040$402.0000
1000$0.6820$682.0000
2000$0.6480$1296.0000
5000$0.6240$3120.0000
10000$0.6040$6040.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHP12
Continuous Drain Current (ID) @ 25°C10.5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)886 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation114W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 6A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SIHP12N50E
PCN Assembly/Origin
Mult Dev Material Chg 30/Aug/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)