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SIHP125N60EF-GE3N-Channel 600 V 25A (Tc) 179W (Tc) Through Hole TO-220AB

1:$3.6850

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHP12-260103
ManufacturerVishay Siliconix
MPN #.SIHP125N60EF-GE3
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetDatasheetSIHP125N60EF(PDF)
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In Stock: 700
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 3.6850
Ext. Price$ 3.6850
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.6850$3.6850
10$3.0940$30.9400
100$2.5020$250.2000
500$2.2240$1112.0000
1000$1.9050$1905.0000
2000$1.7940$3588.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesEF
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHP125
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1533 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation179W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 12A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SIHP125N60EF
PCN Assembly/Origin
Mult Dev Material Chg 30/Aug/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)