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SIHH120N60E-T1-GE3N-Channel 600 V 24A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8

1:$4.7140

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHH12-60673
ManufacturerVishay Siliconix
MPN #.SIHH120N60E-T1-GE3
Estimated Lead Time15 Weeks
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DatasheetDatasheetSIHH120N60E(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 4.7140
Ext. Price$ 4.7140
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.7140$4.7140
10$3.9590$39.5900
100$3.2030$320.3000
500$2.8470$1423.5000
1000$2.4380$2438.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesE
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSIHH120
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 100 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation156W (Tc)
RDS(on) Drain-to-Source On Resistance120mOhm @ 12A, 10V
Package Type (Mfr.)PowerPAK® 8 x 8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
SIHH120N60E
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)