SIHG64N65E-GE3N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AC
1:$10.3220
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHG64-112798
ManufacturerVishay Siliconix
MPN #.SIHG64N65E-GE3
Estimated Lead Time23 Weeks
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Datasheet
SIHG64N65E(PDF)
SIHG64N65E(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 10.3220
Ext. Price$ 10.3220
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$10.3220$10.3220
10$9.0950$90.9500
100$7.8660$786.6000
500$7.1290$3564.5000
1000$6.5390$6539.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHG64
Continuous Drain Current (ID) @ 25°C64A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)369 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7497 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation520W (Tc)
RDS(on) Drain-to-Source On Resistance47mOhm @ 32A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)