SIHG47N60E-E3N-Channel 600 V 47A (Tc) 357W (Tc) Through Hole TO-247AC
1:$8.0100
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-SIHG47-3213
ManufacturerVishay Siliconix
MPN #.SIHG47N60E-E3
Estimated Lead Time-
SampleGet Free Sample
Datasheet
SIHG47N60E (PDF)
SIHG47N60E (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 157
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$8.0100
Ext. Price$8.0100
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.0100$8.0100
25$6.3980$159.9590
100$5.7240$572.3690
500$5.0510$2525.5630
1000$4.5460$4546.4380
2000$4.2600$8519.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberSIHG47
Continuous Drain Current (ID) @ 25°C47A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)220 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9620 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation357W (Tc)
RDS(on) Drain-to-Source On Resistance64mOhm @ 24A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Assembly/Origin
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
SI2308DS-T1-E3$0.4530
N-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
SI7922DN-T1-GE3$1.0170
Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
SIHB100N60E-GE3$4.1710
N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
SQ7415AENW-T1_GE3$0.8290
P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Additional Details
The SIHG47N60E-E3 is a high-power N-Channel MOSFET designed by Vishay Siliconix, featuring a substantial voltage rating of 600V and a continuous drain current of 47A when mounted on a suitable heat sink (Tc). This device offers robust performance with a power dissipation capability of up to 357W (Tc), enabling it to handle demanding applications effectively. Encased in a TO-247AC package, it supports through-hole mounting, which is often preferred for applications requiring secure and reliable connections in high-power circuits. Its gate-source voltage is rated at ±30V with a threshold voltage of 10V, and it has an input capacitance of 9620 pF measured at 100V, indicating its capability to manage charge efficiently for its specifications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.