SIHD2N80E-GE3N-Channel 800 V 2.8A (Tc) 62.5W (Tc) Surface Mount TO-252AA
1:$1.1020
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHD2N-95302
ManufacturerVishay Siliconix
MPN #.SIHD2N80E-GE3
Estimated Lead Time15 Weeks
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Datasheet
SIHD2N80E(PDF)
SIHD2N80E(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.1020
Ext. Price$ 1.1020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1020$1.1020
10$0.8990$8.9900
100$0.7000$70.0000
500$0.5930$296.5000
1000$0.4830$483.0000
3000$0.4550$1365.0000
6000$0.4330$2598.0000
12000$0.4130$4956.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
SeriesE
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHD2
Continuous Drain Current (ID) @ 25°C2.8A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)315 pF @ 100 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation62.5W (Tc)
RDS(on) Drain-to-Source On Resistance2.75Ohm @ 1A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)