SIHB4N80E-GE3N-Channel 800 V 4.3A (Tc) 69W (Tc) Surface Mount TO-263 (D2PAK)
1:$0.8760
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHB4N-76748
ManufacturerVishay Siliconix
MPN #.SIHB4N80E-GE3
Estimated Lead Time15 Weeks
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Datasheet
SIHB4N80E(PDF)
SIHB4N80E(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 0.8760
Ext. Price$ 0.8760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$0.8760$876.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
SeriesE
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHB4
Continuous Drain Current (ID) @ 25°C4.3A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)622 pF @ 100 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation69W (Tc)
RDS(on) Drain-to-Source On Resistance1.27Ohm @ 2A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)