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SIHB22N60E-GE3N-Channel 600 V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D2PAK)

1:$2.5250

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHB22-108942
ManufacturerVishay Siliconix
MPN #.SIHB22N60E-GE3
Estimated Lead Time15 Weeks
SampleGet Free Sample
DatasheetDatasheetSiHB22N60E(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 2.5250
Ext. Price$ 2.5250
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$2.5250$126.2500
100$2.1650$216.5000
250$2.0450$511.2500
500$1.9240$962.0000
1250$1.6480$2060.0000
2500$1.5510$3877.5000
5000$1.4880$7440.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHB22
Continuous Drain Current (ID) @ 25°C21A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)86 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1920 pF @ 100 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation227W (Tc)
RDS(on) Drain-to-Source On Resistance180mOhm @ 11A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SiHB22N60E
PCN Assembly/Origin
SIL-079-2014-Rev-0 26/Sep/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)