SIHB16N50C-E3N-Channel 500 V 16A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
1:$2.5830
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHB16-93686
ManufacturerVishay Siliconix
MPN #.SIHB16N50C-E3
Estimated Lead Time-
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Datasheet
SIH(P,B,F)16N50C(PDF)
SIH(P,B,F)16N50C(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 2.5830
Ext. Price$ 2.5830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$2.5830$2583.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusEnd of Life (EOL)
Base Product NumberSIHB16
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 8A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)