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SIHA25N50E-E3N-Channel 500 V 26A (Tc) 35W (Tc) Through Hole TO-220 Full Pack

1:$2.4780

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHA25-345401
ManufacturerVishay Siliconix
MPN #.SIHA25N50E-E3
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetDatasheetSiHA25N50E(PDF)
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In Stock: 483
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 2.4780
Ext. Price$ 2.4780
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4780$2.4780
50$1.9630$98.1500
100$1.6820$168.2000
500$1.4950$747.5000
1000$1.2800$1280.0000
2000$1.2060$2412.0000
5000$1.1570$5785.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHA25
Continuous Drain Current (ID) @ 25°C26A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)86 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1980 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance145mOhm @ 12A, 10V
Package Type (Mfr.)TO-220 Full Pack
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SiHA25N50E
PCN Assembly/Origin
SIHAYYY 12/May/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationPending Vendor Confirmation
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)