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SIHA120N60E-GE3N-Channel 600 V 25A (Tc) 34W (Tc) Through Hole TO-220 Full Pack

1:$2.8570

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHA12-100744
ManufacturerVishay Siliconix
MPN #.SIHA120N60E-GE3
Estimated Lead Time15 Weeks
SampleGet Free Sample
DatasheetDatasheetSiHA120N60E(PDF)
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In Stock: 699
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 2.8570
Ext. Price$ 2.8570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.8570$2.8570
10$2.3970$23.9700
100$1.9390$193.9000
500$1.8970$948.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesE
Packaging
Bulk
Lifecycle StatusActive
Base Product NumberSIHA120
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)45 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1562 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation34W (Tc)
RDS(on) Drain-to-Source On Resistance120mOhm @ 12A, 10V
Package Type (Mfr.)TO-220 Full Pack
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SiHA120N60E
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)