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SIHA11N80E-GE3N-Channel 800 V 12A (Tc) 34W (Tc) Through Hole TO-220 Full Pack

1:$1.9300

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIHA11-42151
ManufacturerVishay Siliconix
MPN #.SIHA11N80E-GE3
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetDatasheetSIHA11N80E(PDF)
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In Stock: 758
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.9300
Ext. Price$ 1.9300
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9300$1.9300
50$1.5290$76.4500
100$1.3100$131.0000
500$1.2810$640.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesE
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSIHA11
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)88 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1670 pF @ 100 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation34W (Tc)
RDS(on) Drain-to-Source On Resistance440mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-220 Full Pack
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SIHA11N80E
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)