ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
SIE808DF-T1-GE3N-Channel 20 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

1:$1.4990

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIE808-22494
ManufacturerVishay Siliconix
MPN #.SIE808DF-T1-GE3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSIE808DF(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 1.4990
Ext. Price$ 1.4990
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$1.4990$4497.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
SI1965DH-T1-GE3$0.3940
Vishay Siliconix
Mosfet Array 12V 1.3A 1.25W Surface Mount SC-70-6
SI2308DS-T1-E3$0.4260
Vishay Siliconix
N-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
SI7390DP-T1-GE3$0.9290
Vishay Siliconix
N-Channel 30 V 9A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
SI7922DN-T1-GE3$0.9570
Vishay Siliconix
Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
SIHB100N60E-GE3$3.9260
Vishay Siliconix
N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
SIZ710DT-T1-GE3$1.1510
Vishay Siliconix
Mosfet Array 20V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
SQ7415AENW-T1_GE3$0.7800
Vishay Siliconix
P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSIE808
Continuous Drain Current (ID) @ 25°C60A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)155 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8800 pF @ 10 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation5.2W (Ta), 125W (Tc)
RDS(on) Drain-to-Source On Resistance1.6mOhm @ 25A, 10V
Package Type (Mfr.)10-PolarPAK® (L)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case10-PolarPAK® (L)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SIE808DF
PCN Obsolescence/ EOL
OBS NOTICE 29/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)