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SIA850DJ-T1-GE3N-Channel 190 V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

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ABRmicro #.ABR2045-SIA850-107179
ManufacturerVishay Siliconix
MPN #.SIA850DJ-T1-GE3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSIA850DJ(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 6, 2024
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Technical Specifications
SeriesLITTLE FOOT®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSIA850
Continuous Drain Current (ID) @ 25°C950mA (Tc)
Drain-to-Source Voltage (VDS)190 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)90 pF @ 100 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.9W (Ta), 7W (Tc)
RDS(on) Drain-to-Source On Resistance3.8Ohm @ 360mA, 4.5V
Package Type (Mfr.)PowerPAK® SC-70-6 Dual
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.4V @ 250µA
Package / CasePowerPAK® SC-70-6 Dual
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SIA850DJ
PCN Obsolescence/ EOL
SIL-0632014 16/Apr/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)