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SIA431DJ-T1-GE3P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

1:$0.4580

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SIA431-10639
ManufacturerVishay Siliconix
MPN #.SIA431DJ-T1-GE3
Estimated Lead Time18 Weeks
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DatasheetDatasheetSIA431DJ(PDF)
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In Stock: 5028
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.4580
Ext. Price$ 0.4580
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4580$0.4580
10$0.3950$3.9500
100$0.2740$27.4000
500$0.2290$114.5000
1000$0.1950$195.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSIA431
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 8 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 10 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.5W (Ta), 19W (Tc)
RDS(on) Drain-to-Source On Resistance25mOhm @ 6.5A, 4.5V
Package Type (Mfr.)PowerPAK® SC-70-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)850mV @ 250µA
Package / CasePowerPAK® SC-70-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationPending Vendor Confirmation
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)