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SI8819EDB-T2-E1P-Channel 12 V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8)
1:$0.3380
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SI8819-560383
ManufacturerVishay Siliconix
MPN #.SI8819EDB-T2-E1
Estimated Lead Time8 Weeks
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DatasheetSI8819EDB(PDF)
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In Stock: 4060
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.3380
Ext. Price$ 0.3380
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3380$0.3380
10$0.2600$2.6000
100$0.1560$15.6000
500$0.1440$72.0000
1000$0.0980$98.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI8819
Continuous Drain Current (ID) @ 25°C2.9A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 3.7V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 8 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)650 pF @ 6 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation900mW (Ta)
RDS(on) Drain-to-Source On Resistance80mOhm @ 1.5A, 3.7V
Package Type (Mfr.)4-MICRO FOOT® (0.8x0.8)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 250µA
Package / Case4-XFBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)