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SI8809EDB-T2-E1P-Channel 20 V 1.94 (Ta) 500mW (Ta) Surface Mount 4-Microfoot

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ABRmicro #.ABR2045-SI8809-52606
ManufacturerVishay Siliconix
MPN #.SI8809EDB-T2-E1
Estimated Lead Time-
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DatasheetDatasheetSI8809EDB-T2-E1(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 6, 2024
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSI8809
Continuous Drain Current (ID) @ 25°C1.94 (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 8 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance90mOhm @ 1.5A, 4.5V
Package Type (Mfr.)4-Microfoot
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 250µA
Package / Case4-XFBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
SI8809EDB-T2-E1
Environmental Information
Material ComplianceVishay Aluminum Capacitor and Energy Storage REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)