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SI8416DB-T2-E1N-Channel 8 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

1:$0.5470

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SI8416-169800
ManufacturerVishay Siliconix
MPN #.SI8416DB-T2-E1
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetSI8416DB(PDF)
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In Stock: 6931
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 0.5470
Ext. Price$ 0.5470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5470$0.5470
10$0.4750$4.7500
100$0.3290$32.9000
500$0.2750$137.5000
1000$0.2340$234.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI8416
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)8 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.2V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1470 pF @ 4 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.77W (Ta), 13W (Tc)
RDS(on) Drain-to-Source On Resistance23mOhm @ 1.5A, 4.5V
Package Type (Mfr.)6-Micro Foot™ (1.5x1)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±5V
VGS(th) Gate-to-Source Threshold Voltage (Max.)800mV @ 250µA
Package / Case6-UFBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)