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SI7100DN-T1-GE3N-Channel 8 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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ABRmicro #.ABR2045-SI7100-89864
ManufacturerVishay Siliconix
MPN #.SI7100DN-T1-GE3
Estimated Lead Time-
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DatasheetDatasheetSI7100DN(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 6, 2024
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSI7100
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)8 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)105 nC @ 8 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3810 pF @ 4 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
Maximum Power Dissipation3.8W (Ta), 52W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 15A, 4.5V
Package Type (Mfr.)PowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CasePowerPAK® 1212-8
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SI7100DN
PCN Assembly/Origin
Multiple Fabracation Changes09/Jul/2014
PCN Obsolescence/ EOL
SIL-0392016 16/Dec/2016
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)