SI5499DC-T1-E3P-Channel 8 V 6A (Tc) 2.5W (Ta), 6.2W (Tc) Surface Mount 1206-8 ChipFET™
1:$0.7800
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ABRmicro #.ABR2045-SI5499-20378
ManufacturerVishay Siliconix
MPN #.SI5499DC-T1-E3
Estimated Lead Time-
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Datasheet
SI5499DC(PDF)
SI5499DC(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.7800
Ext. Price$ 0.7800
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Qty.Unit PriceExt. Price
1$0.7800$0.7800
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSI5499
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)8 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 8 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1290 pF @ 4 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 6.2W (Tc)
RDS(on) Drain-to-Source On Resistance36mOhm @ 5.1A, 4.5V
Package Type (Mfr.)1206-8 ChipFET™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±5V
VGS(th) Gate-to-Source Threshold Voltage (Max.)800mV @ 250µA
Package / Case8-SMD, Flat Leads
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)