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SI4823DY-T1-E3P-Channel 20 V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-SI4823-21079
ManufacturerVishay Siliconix
MPN #.SI4823DY-T1-E3
Estimated Lead Time-
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DatasheetDatasheetSI4823DY(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 3, 2024
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Technical Specifications
SeriesLITTLE FOOT®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSI4823
Continuous Drain Current (ID) @ 25°C4.1A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)660 pF @ 10 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.7W (Ta), 2.8W (Tc)
RDS(on) Drain-to-Source On Resistance108mOhm @ 3.3A, 4.5V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
SI4823DY
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)