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SI4630DY-T1-GE3N-Channel 25 V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

1:$1.5440

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SI4630-67322
ManufacturerVishay Siliconix
MPN #.SI4630DY-T1-GE3
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetSi4630DY(PDF)
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In Stock: 3462
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.5440
Ext. Price$ 1.5440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5440$1.5440
10$1.2840$12.8400
100$1.0230$102.3000
500$0.8650$432.5000
1000$0.7340$734.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI4630
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)161 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6670 pF @ 15 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.5W (Ta), 7.8W (Tc)
RDS(on) Drain-to-Source On Resistance2.7mOhm @ 20A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH info available upon request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)