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SI3459BDV-T1-E3P-Channel 60 V 2.9A (Tc) 3.3W (Tc) Surface Mount 6-TSOP

1:$0.6440

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ABRmicro #.ABR2045-SI3459-9180
ManufacturerVishay Siliconix
MPN #.SI3459BDV-T1-E3
Estimated Lead Time11 Weeks
SampleGet Free Sample
DatasheetDatasheetSI3459BDV(PDF)
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In Stock: 4483
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.6440
Ext. Price$ 0.6440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6440$0.6440
10$0.5550$5.5500
100$0.3840$38.4000
500$0.3210$160.5000
1000$0.2730$273.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI3459
Continuous Drain Current (ID) @ 25°C2.9A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 30 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.3W (Tc)
RDS(on) Drain-to-Source On Resistance216mOhm @ 2.2A, 10V
Package Type (Mfr.)6-TSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseSOT-23-6 Thin, TSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SI3459BDV
PCN Assembly/Origin
New Solder Plating Site 18/Apr/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)